Integrated gate commutated thyristor (IGCT) is a new type of power semiconductor device, which combines the advantages of GTO (gate turn-off thyristor) and IGBT (insulated gate bipolar transistor), and has the characteristics of high voltage, high current, high frequency and fast switching. The IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects the gate driver in a low inductance mode at the periphery, combining the stable disconnection function of the transistor and the advantage of the low on-state loss of the thyristor module. The performance of the thyristor module is displayed in the on-phase, and the characteristics of the transistor are displayed in the off-phase. Because of the selection of buffer structure and shallow emitter process, the dynamic loss is reduced by about 50%. In addition, this type of component has a continuous current diode integrated on the chip with excellent dynamic characteristics. IGCT has the advantages of small size, light weight, high efficiency, long life, easy control, etc. It can be used in various power electronic conversion fields, such as DC transmission, AC transmission, motor drive, wind power generation and so on.
5SHY4045L0001
Compact structure: IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects with the gate driver in a low inductance mode at the periphery, making the entire module compact and easy to install and use.
Low on-loss: IGCT plays the performance of thyristors in the on-stage, and shows the characteristics of transistors in the off stage, so its on-loss is low, and it has the advantages of high efficiency and energy saving.
High reliability: IGCT adopts special packaging process and materials, has high mechanical strength and thermal stability, can work under harsh environmental conditions, and has high reliability.
